optical & m o dulat o r d rivers - c hip 4 4 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com gaas hemt mmic modulator driver amplifier, dc - 35 ghz v04.0909 general description features functional diagram s mall s ignal gain: 15 db output v oltage: up to 8 v pk-pk p sat output p ower: +23 dbm h igh s peed p erformance: >35 g h z 3 db bandwidth s upply v oltage: +5 v @ 200 m a s mall d ie s ize: 2.2 x 1.80 x 0.1 mm electrical specifcations [1] , t a = +25 c, vdd = 5v, vgg2 = 1.5v typical applications t his h m c - auh 249 is ideal for: ? fiber optic modulator d river ? gain block for t est & measurement e quipment ? p oint-to- p oint/ p oint-to-multi- p oint r adios ? wideband c ommunication & s urveillance s ystems ? r adar warning s ystems ? military & s pace t he h m c - auh 249 is a ga a s mm ic he m t d istributed d river a mplifer die which operates between dc and 35 g h z and provides a typical 3 db bandwidth of 37 g h z. t he amplifer provides 15 db of gain and +23 dbm of saturated output power while requiring only 200 m a from a +5 v supply. t he h m c - auh 249 exhibits very good gain and phase ripple beyond 25 g h z and can output greater than 8 v peak-to- peak, making it ideal for use in broadband wireless, fber optic communication and test equipment applications. t he amplifer die occupies less than 4 mm2 which facilitates easy integration into multi- c hip-modules (m c ms). t he h m c - auh 249 requires a bias-tee as well as off-chip blocking components and bypass capacitors for the dc supply lines. v gg1 adjusts the bias current for the device while v gg2 adjusts the output gain. p arameter min. t yp. max. u nits gain 15 db bandwidth (3 db) >35 g h z gain v ariation dc - 35 g h z 1 db group d elay v ariation dc - 25 g h z 10 ps p ower output at 1 db c ompression dc - 5 g h z 21 dbm p ower output at s aturation dc - 5 g h z 23 dbm maximum output a mplitude 8 v pp i nput r eturn l oss dc - 20 g h z dc - 35 g h z 15 9 db db output r eturn l oss dc - 20 g h z dc - 35 g h z 13 7 db db p ower d issipation 1 w s upply c urrent ( i dd) 200 m a [1] u nless otherwise indicated, all measurements are from die in a test fxture. [2] a djust v gg1 between -1.0 v to 0 v to achieve i dd = 200 m a . HMC-AUH249
optical & m o dulat o r d rivers - c hip 4 4 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com group delay vs. frequency output return loss vs. frequency gain vs. frequency input return loss vs. frequency fixtured pout vs. frequency HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz -10 -6 -2 2 6 10 14 18 0 5 10 15 20 25 30 35 40 45 50 gain (db) frequency (ghz) 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 35 40 p1db p3db pout (dbm) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 return loss (db) frequency (ghz) 150 170 190 210 230 250 10 15 20 25 30 35 40 group delay (psec) frequency (ghz)
optical & m o dulat o r d rivers - c hip 4 4 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz 12.5 gb/s eye diagram [1] [1] i nput 12.5 gb/s data stream, 01.0 v , pr b s 2?31-1 absolute maximum ratings d rain bias v oltage ( v dd) +7 v dc r f i nput p ower +10 dbm c hannel t emperature 180 c s torage t emperature -65 to +150 c operating t emperature -55 to +110 c electr o static se n sitive device ob serve ha n dli ng precauti on s p arameter min. t yp. max. u nits p ositive s upply v oltage ( v dd) 5 6 v p ositive s upply c urrent 200 230 m a bias c urrent a djust ( v gg1) -1 -0.5 0 v output v oltage a djust ( v gg2) 0.3 1.5 1.5 v r f i nput p ower 4 dbm recommended operating conditions
optical & m o dulat o r d rivers - c hip 4 4 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz outline drawing no tes : 1. all di m e n si on s are i n i n ches [mm]. 2. t y pical bon d pad is .004 s q uare . 3. b ac k side m etalli z ati on: go ld . 4. b ac k side m etal is g r o u n d . 5. bon d pad m etalli z ati on: go ld . 6. c onn ecti on no t re q uired fo r u n la b eled bon d pads . 7. o verall die si z e .002 die packaging information [1] s tandard a lternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
optical & m o dulat o r d rivers - c hip 4 4 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz p in number function d escription i nterface s chematic 1 r f i n dc coupled. blocking c ap is needed. 2 res 1 ac coupled 50 termination. 3 v gg2 gate control for amplifer. p lease follow mm ic a mplifer biasing p rocedure application note. s ee assembly for required external components. 4 r fo ut & v dd r f output and dc bias ( v dd) for the output stage. 6 v gg1 gate control for amplifer. p lease follow mm ic a mplifer biasing p rocedure application note. s ee assembly for required external components. 5 res 2 ac coupled 35 termination. d ie bottom gn d d ie bottom must be connected to r f/ dc ground. pin descriptions application circuit
optical & m o dulat o r d rivers - c hip 4 4 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz note 1: d rain bias ( v dd) must be applied through a broadband bias tee or external bias network
optical & m o dulat o r d rivers - c hip 4 4 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com ? 1 mil diameter wire bonds are used on v gg1 and v gg2 connections to the capacitors and 27 resistors. ? 0.5mil x 3mil ribbon bonds are used on r f connections ? c apacitors and resistors on v gg1 and v gg2 are used to flter low frequency, <800m h z, r f pickup ? 35 and 50 resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high frequency termination. ? for best gain fatness and group delay variation, eccosorb can be epoxied on the transmission line covering the center 3/4 of the transmission line length. e ccosorb may also be placed partially across the res 1 pad and 35 resistor for improved gain fatness and group delay variation. (the insertion of the transmission line helps reduce low frequency, <10ghz, gain ripple) ? s ilver-flled conductive epoxy is used for die attachment (backside of the die should be grounded and the gnd pads are connected to the backside metal through vias) device operation device mounting t hese devices are susceptible to damage from e lectrostatic d ischarge. p roper precautions should be observed during handling, assembly and test. t he input to this device should be ac -coupled. device power up instructions 1. ground the device 2. bring v gg1 to -0.5 v (no v bias current) 3. bring v gg2 to +1.5 v (no v bias current) 4. bring v dd to +5 v (150m a to 225m a drain current) (initially the drain current (vbias) will rise sharply with a small vbias voltage, but will fatten out as vbias approaches 5v) ? v gg1 should be varied between -1.0 v and 0 v to achieve 200m a current on the drain ( v bias). ? v bias may be increased to +5.5 v if required to achieve greater output voltage swing. ? v gg2 may be adjusted between +1.5 v and +0.3 v to vary the output voltage swing. device power down instructions 1. r everse the sequence identifed above in steps 1 through 4. HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz
optical & m o dulat o r d rivers - c hip 4 4 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics t he die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general h andling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. t ypical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: a ll bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: s uppress instrument and bias supply transients while bias is applied. u se shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t he chip is back-metallized and can be die mounted with a u s n eutectic preforms or with electrically conductive epoxy. t he mounting surface should be clean and fat. e utectic d ie a ttach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c . when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c . d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. e poxy d ie a ttach: a pply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding r f bonds made with 0.003 x 0.0005 ribbon are recommended. t hese bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. a ll bonds should be made with a nominal stage temperature of 150 c . a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. a ll bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic ribbon bond 0.076mm (0.003) rf ground plane 0.127mm (0.005) thick alumina thin film substrate figure 1. 0.102mm (0.004) thick gaas mmic ribbon bond 0.076mm (0.003) rf ground plane 0.150mm (0.005) thick moly tab 0.254mm (0.010 thick alumina thin film substrate figure 2. HMC-AUH249 v04.0909 gaas hemt mmic modulator driver amplifier, dc - 35 ghz
|
